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| S T M7064N S amHop Microelectronics C orp. Aug 17,2005 N-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S 30V F E AT UR E S ( m W ) T yp ID 16A R DS (ON) S uper high dense cell design for low R DS (ON). 6 @ V G S = 10V 8.5 @ V G S = 4.5V R ugged and reliable. S urface Mount P ackage. Thermal P ad E xposed with S tandard S OP -8 Outline Bottom-side Drain Contact DD DD D G S OP -8 E xpos ed 1S SS D D D D 5 6 7 8 4 3 2 1 G S S S ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous a @ TJ=25 C b -P ulsed Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange S ymbol VDS VGS ID IDM IS PD TJ, TS TG Limit 30 20 16 50 1.7 3.0 -55 to 150 Unit V V A A A W C THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-Ambient a R JA 40 C /W 1 S T M7064N E LE CTR ICAL CHAR ACTE R IS TICS (TC=25 C unless otherwise noted) Parameter 5 S ymbol BVDSS IDSS IGSS VGS(th) R DS (ON) ID(ON) gFS CISS COSS CRSS Rg c Condition VGS = 0V, ID = 250uA VDS = 24V, VGS = 0V VGS = 20V, VDS = 0V VDS = VGS, ID = 250uA VGS =10V, ID = 16A VGS =4.5V, ID= 12A VDS = 10V, VGS = 10V VDS = 10V, ID = 8A Min Typ C Max Unit 30 1 V uA 100 nA 1 1.6 6 8.5 30 20 3200 550 320 3.2 32 48 93 30 58.6 29 6.5 12 3 10 V m ohm OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHAR ACTE R IS TICS b Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance 7.5 m ohm A S PF PF PF DYNAMIC CHAR ACTE R IS TICS c Input Capacitance Output Capacitance R everse Transfer Capacitance Gate resistance VDS =15V, VGS = 0V f =1.0MHZ VGS =0V, VDS = 0V, f=1.0MHZ VDD = 15V ID = 1 A VGS = 10V R GE N = 6 ohm VDS =15V, ID =16A,VGS =10V VDS =15V, ID =16A,VGS =4.5V Gate-S ource Charge Gate-Drain Charge Qgs Qgd VDS =15V, ID =16A VGS =10V 2 ohm S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time Turn-Off Delay Time Fall Time Total Gate Charge tD(ON) tr tD(OFF) tf Qg ns ns ns ns nC nC nC nC STM7064N ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted) Parameter Diode Forward Voltage Symbol b Condition VGS = 0V, Is = 1.7A Min Typ Max Unit 0.74 1.3 V DRAIN-SOURCE DIODE CHARACTERISTICS VSD Notes a.Surface Mounted on FR4 Board, t <=10sec. b.Pulse Test:Pulse Width 300us, Duty Cycle 2%. c.Guaranteed by design, not subject to production testing. 25 VGS=10V 20 20 VGS=4.5V 15 ID, Drain Current(A) 15 VGS=3V ID, Drain Current (A) VGS=8V 25 C 10 Tj=125 C 5 -55 C 10 5 0 0 0 0.5 1 1.5 2 2.5 3 0 0.7 1.4 2.1 2.8 3.5 4.2 VDS, Drain-to-Source Voltage (V) VGS, Gate-to-Source Voltage (V) Figure 1. Output Characteristics 12.0 1.6 Figure 2. Transfer Characteristics VGS=4.5V RDS(ON), On-Resistance Normalized 10.0 1.4 1.2 1.0 0.8 0.6 0.4 -55 VGS=4.5V ID=12A VGS=10V ID=16A RDS(on) (m W) 8.0 6.0 4.0 2.0 0 VGS=10V 0 5 10 15 20 25 -25 0 25 50 75 100 125 Tj( C) ID, Drain Current (A) Tj, Junction Temperature ( C) Figure 3. On-Resistance vs. Drain Current and Gate Voltage Figure 4. On-R esistance VS. Temperature Temperature 3 S T M7064N B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 -50 -25 0 25 50 75 100 125 150 V DS =V G S ID=250uA 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 ID=250uA 6 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature 24 F igure 6. B reakdown V oltage V ariation with T emperature 20.0 ID=16A Is , S ource-drain current (A) 20 10.0 25 C R DS (on) (m W) 16 70 C 12 8 25 C 4 0 125 C 125 C 70 C 1.0 0 2 4 6 8 10 0.4 0.6 0.8 1.0 1.2 1.4 V G S , G ate-S ource Voltage (V ) V S D, B ody Diode F orward V oltage (V ) F igure 7. On-R es is tance vs . G ate-S ource V oltage F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 4 S T M7064N 5400 V G S , G ate to S ource V oltage (V ) 10 8 6 4 2 0 VDS =15V ID=16A 4500 C , C apacitance (pF ) 3600 2700 1800 900 0 C rs s 0 5 C is s 6 C os s 10 15 20 25 30 0 8 16 24 32 40 48 56 64 V DS , Drain-to S ource Voltage (V ) Qg, T otal G ate C harge (nC ) F igure 9. C apacitance F igure 10. G ate C harge 600 T D(off) Tr 80 L im S witching T ime (ns ) ID, Drain C urrent (A) 100 60 10 N) T D(on) Tf 10 10 it ms S 10 DC (O 1s 1 1 1 V DS =15V ,ID=1A V G S =10V 0.1 0.03 VGS =10V S ingle P ulse T A=25 C 0.1 1 10 30 50 6 10 60 100 300 600 RD 0m s R g, G ate R es is tance (W) V DS , Drain-S ource V oltage (V ) F igure 11.s witching characteris tics F igure 12. Maximum S afe O perating Area 5 S T M7064N V DD ton toff tr 90% 5 VG S R GE N V IN D G RL V OUT td(on) V OUT td(off) 90% 10% tf 10% INVE R TE D 90% S V IN 50% 10% 50% P ULS E WIDTH F igure 11. S witching T es t C ircuit 10 F igure 12. S witching Waveforms Normalized Transient Thermal Resistance 1 0.5 0.2 0.1 P DM t1 on 0.1 0.05 0.02 0.01 1. 2. 3. 4. t2 Single Pulse 0.0001 0.001 0.01 0.1 1 10 0.01 0.00001 R thJ A (t)=r (t) * R thJ A R thJ A=S ee Datas heet T J M-T A = P DM* R thJ A (t) Duty C ycle, D=t1/t2 100 1000 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve 6 S T M7064N PAC K AG E OUT LINE DIME NS IONS S OP -8 7 S T M7064N SO-8 Tape and Reel Data SO-8 Carrier Tape unit:P PACKAGE SOP 8N 150O A 12.0 O0.3 B 5.0 O0.1 C 4.0 O0.1 D 6.5 O0.1 E 1.5 O0.1 SO-8 Reel UNIT:P TAPE SIZE 12 P REEL SIZE r300 M 300 N 101 W 10 O 0.2 8 |
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